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2SB11 GBPC4004 1N960C X1227S8 C847A A1166 IRLR8743 MAX3610
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  smd type transistors 1 www.kexin.com.cn pnp silicon transistor CZT5401 features absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v collector current i c 600 ma power dissipation p d 2w operating and storage junction temperature t j ,t stg -65to150 thermal resistance ja 62.5 /w electrical characteristics ta = 25 symbol testconditons min max unit i cbo v cb =100v 50 na i cbo v cb =100v, t a =150 50 ma i ebo v eb =3.0v 50 na b vcbo i c =100a 160 v b vceo i c =1.0ma 150 v b vebo i e =10a 5.0 v v ce(sat) i c =10ma, i b =1.0ma 0.2 v v ce(sat) i c =50ma, i b =5.0ma 0.5 v v be(sat) i c =10ma, i b =1.0ma 1.0 v v be(sat) i c =50ma, i b =5.0ma 1.0 v v ce =5.0v, i c =1.0ma 50 v ce =5.0v, i c =10ma 60 240 v ce =5.0v, i c =50ma 50 f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 6.0 pf h fe v ce =10v, i c =1.0ma, f=1.0khz 40 200 n f v ce =5.0v, i c =200ma, r s =10 ,f=10hz to 15.7khz 8.0 db h fe sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter 4 collector


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